FDMS86101DC Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been bined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient.
FDMS86101DC Key Features
- Shielded Gate MOSFET Technology
- DUAL COOL Top Side Cooling PQFN package
- Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A
- Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A
- High performance technology for extremely low RDS(on)
- 100% UIL Tested
- RoHS pliant