FDP2D9N12C Description
MOSFET - N-Channel, Shielded Gate PowerTrench 120 V, 2.95 mW, 181 A FDP2D9N12C.
FDP2D9N12C Key Features
- Shielded Gate MOSFET Technology
- Max RDS(on) = 2.95 mW at VGS = 10 V, ID = 181 A
- 50% Lower Qrr than Other MOSFET Suppliers
- Lowers Switching Noise/EMI
- 100% UIL Tested
- These Devices are Pb-Free, Halogen-Free and are RoHS pliant
FDP2D9N12C Applications
- Synchronous Rectification for ATX / Server / Tele PSU