FDS3672 Description
MOSFET N-Channel, POWERTRENCH) 100 V, 7.5 A, 22 mW FDS3672.
FDS3672 Key Features
- rDS(ON) = 19 mW (Typ.), VGS = 10 V, ID = 7.5 A
- Qg(tot) = 28 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Pb-Free and Halide Free