FDS6676AS-G Description
The FDS6676AS is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.
FDS6676AS-G Key Features
- 14.5 A, 30 V
- RDS(ON) Max = 6.0 mW at VGS = 10 V
- RDS(ON) Max = 7.25 mW at VGS = 4.5 V
- Includes SyncFET Schottky Body Diode
- Low Gate Charge (45 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- These Devices are Pb-Free and are RoHS pliant