FDS8858CZ Description
These dual N and P-Channel enhancement mode power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench process that has been especially Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A High power and handing capability in a widely used surface mount package Fast switching speed tailored to...
FDS8858CZ Key Features
- Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
- Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A Q2: P-Channel
- Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
- Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
- High power and handing capability in a widely used surface
- Fast switching speed