FDS9431A
Overview
This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance.
- -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
- Fast switching speed.
- High density cell design for extremely low RDS(ON).
- High power and current handling capability. *
- 6 7 G SS 8 SO-8 S
