FGH60N60SMD
Overview
Ratings Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 600 V ±20 V ±30 V IC Collector Current TC = 25°C 120 A TC = 100°C 60 A ICM (Note 1) Pulsed Collector Current 180 A IF Diode Forward Current TC = 25°C 60 A TC = 100°C 30 A IFM (Note 1) Pulsed Diode Maximum Forward Current 180 A PD Maximum Power Dissipation TC = 25°C 600 W TC = 100°C 300 W TJ Operating Junction Temperature -55 to +175 °C TSTG Storage Temperature Range -55 to +175 °C TL Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds 300 °C Stresses exceeding those listed in the Maximum Ratings.
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
- High Input Impedance
- Fast Switching: EOFF = 7.5 uJ/A
- Tightened Parameter Distribution
- This Device is Pb-Free and is RoHS Compliant
