FQA90N15-F109 Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio...
FQA90N15-F109 Key Features
- RDS(on) = 18 mΩ (Max.) @ VGS = 10 V, ID = 45 A
- Low Gate Charge (Typ. 220 nC)
- Low Crss (Typ. 200 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Memperature Rating