FQB22P10TM-F085 Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as audio...
FQB22P10TM-F085 Key Features
- 22A, -100V, RDS(on) = 0.125Ω @VGS = -10 V
- Low gate charge ( typical 40 nC)
- Low Crss ( typical 160 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Qualified to AEC Q101
- RoHS pliant