NGB8207N Description
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).
NGB8207N Applications
- Ideal for Coil−on−Plug and Driver−on−Coil Applications
- Gate−Emitter ESD Protection
NGB8207N is Ignition IGBT manufactured by onsemi .
| Part Number | Description |
|---|---|
| NGB8207NT4G | Ignition IGBT |
| NGB8207ABN | Ignition IGBT |
| NGB8207ABNT4G | Ignition IGBT |
| NGB8207AN | Ignition IGBT |
| NGB8207ANT4G | Ignition IGBT |
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).