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NGB8207N Description

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT).

NGB8207N Applications

  • Ideal for Coil−on−Plug and Driver−on−Coil Applications
  • Gate−Emitter ESD Protection