NVMFWS003N10MC Description
DATA SHEET .onsemi. MOSFET - Power, Single N-Channel 100 V, 3.1 mW, 169 A NVMFWS003N10MC V(BR)DSS 100 V RDS(ON) MAX 3.1 mW @ 10 V ID MAX 169 A.
NVMFWS003N10MC Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC-Q101 Qualified and PPAP Capable
- Wettable Flank Product
- These Devices are Pb-Free, Halogen Free/BFR Free, Beryllium Free
- 55 to °C +175
- Steady State (Note 1)
- Steady State (Note 2) RqJA
- Rev. 1