NVMFWS1D9N08X Description
MOSFET Power, Single N-Channel, STD Gate, SO8FL 80 V, 1.9 mW, 201 A NVMFWS1D9N08X.
NVMFWS1D9N08X Key Features
- Low QRR, Soft Recovery Body Diode
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Fre e and are RoHS
NVMFWS1D9N08X Applications
- Synchronous Rectification (SR) in DC−DC and AC−DC
- Primary Switch in Isolated DC−DC Converter