NVMFWS2D3N04XM Description
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 2.35 mW, 121 A NVMFWS2D3N04XM.
NVMFWS2D3N04XM Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Small Footprint (5 x 6 mm) with pact Design
- AECQ101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS