NVTFWS1D3N04XM Description
MOSFET - Power, Single N-Channel, STD Gate, m8FL 40 V, 1.43 mW, 178 A NVTFWS1D3N04XM.
NVTFWS1D3N04XM Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Small Footprint (3.3 x 3.3 mm) for pact Design
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS