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LD242 - GaAs-IR-Lumineszenzdiode

Datasheet Summary

Features

  • Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483.
  • DIN humidity caregory in acc. with DIN 40 040 GQG.

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Datasheet Details

Part number LD242
Manufacturer OSRAM
File Size 185.28 KB
Description GaAs-IR-Lumineszenzdiode
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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant LD 242 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Großer Öffnungskegel • Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 • Anwendungsklasse nach DIN 40 040 GQC Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • Sensorik • Lichtgitter Typ Type LD 242-2/3 LD 242 E7800 1) Features • • • • • Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc.
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