LD242 - GaAs-IR-Lumineszenzdiode

ams OSRAM

Key Features

Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483.
DIN humidity caregory in acc. with DIN 40 040 GQG.

LD242 gaas-ir-lumineszenzdiode by ams OSRAM - Datasheet Preview

Datasheet Details

Part number	LD242
Manufacturer	ams OSRAM
File Size	185.28 KB
Description	GaAs-IR-Lumineszenzdiode
Datasheet	LD242 Datasheet

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant LD 242 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Großer Öffnungskegel • Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 • Anwendungsklasse nach DIN 40 040 GQC Anwendungen • Lichtschranken für Gleich- und Wechsellichtbetrieb • Sensorik • Lichtgitter Typ Type LD 242-2/3 LD 242 E7800 1) Features • • • • • Fabricated in a liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 • DIN humidity caregory in acc.