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LD242 - GaAs Infrared Emitter

Datasheet Summary

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom, TC = 25 °C Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung, TC = 25 °C Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value

Features

  • q GaAs infrared emitting diode, fabricated in a q q q q q Schmelzepitaxieverfahren Kathode galvanisch mit Gehäuseboden verbunden Hohe Zuverlässigkeit Großer Öffnungskegel Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 Anwendungsklasse nach DIN 40 040 GQG liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 DIN humidity category in acc. with DIN 40 040 GQG Anwendungen q IR-Fernsteuerungen und.

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Datasheet Details

Part number LD242
Manufacturer Siemens Group
File Size 39.85 KB
Description GaAs Infrared Emitter
Datasheet download datasheet LD242 Datasheet
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Full PDF Text Transcription

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 ø5.5 ø5.2 GET06625 Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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