LEAP1MS Datasheet | ams OSRAM

Features - Package: OSTAR High Power Projection - Chip technology: Thinfilm  - Typ. Radiation: 120° (Lambertian emitter) - Color: λdom = 613 nm (- amber) - ESD: 2 k V acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Ordering Information  Type LE A P1MS-RRRU-W2-0D00 2 | Version 1.1 | 2025-12-05 Luminous Flux 1) IF = 4000 m A ΦV 1300 ... 1800 lm Ordering Code Q65115A1247  LE A P1MS DATASHEET Maximum Ratings Parameter Storage Temperature Junction Temperature Forward Current Tj = Tj,max Forward Current pulsed D = 0.6; f = 240 Hz; Tj = Tj,max Surge Current t P ≤ 50 μs; D = 0.1 ; Tj = Tj,max ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Reverse current 2) Max. voltage difference anode-board, cathode-board Symbol Tstg Tj IF IF pulse VESD IR ∆Va-b, ∆Vc-b min. max. max. min. max. max. max. max. Values -40 °C 100 °C 125 °C 200 m A 5500 m A 5500 m A 6900 m A 2 k V 200 m A 40 V   3 | Version 1.1 | 2025-12-05 LE A P1MS DATASHEET Characteristics IF = 4000 m A; TS = 25 °C Parameter Peak Wavelength Dominant Wavelength 3) Spectral bandwidth at 50% Irel,max Viewing angle at 50% IV Radiating surface Partial Flux acc. CIE 127:2007 4) IF = 4000 m A Forward Voltage 5) IF = 4000 m A Reverse voltage (ESD device) Reverse voltage 2) IR = 20 m A Real thermal resistance junction/solderpoint Electrical thermal resistance junction/solderpoint with efficiency ηe = 23 %  Symbol λpeak...