FQD15N10
FQD15N10 is 100V N-Channel MOSFET manufactured by OuCan.
Description
Product Summary
The FQP15N10 & FQPF15N10 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
100V 15A < 80mΩ < 75m Ω
FQP15N10
FQPF15N10
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25°C TC=100°C
Pulsed Drain Current C
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
Avalanche energy L=0.1m H C
TC=25°C Power Dissipation B TC=100°C
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ,...
