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N-Channel 100-V (D-S) MOSFET
FQD20N10
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
100 0.075 at VGS = 10 V
ID (A)a 20
Qg (Typ) 31 nC
TO-252
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • Primary Side Switch
D
RoHS
COMPLIANT
GDS Top View
Drain Connected to Tab
Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free)
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
Avalanche Current Pulse Single Pulse Avalanche Energy
L = 0.
FQD20N10 Datasheet
