MMBT2907A-AU Datasheet | PanJit Semiconductor

FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600m A Acquire quality system certificate : TS16949 AEC-Q101 qualified Lead free in pliance with EU Ro HS 2011/65/EU directive Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case: SOT-23 Terminals: Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.0003 ounces, 0.0084 grams Device Marking: M7A 0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.070(1.80) 0.004(0.10) 0.000(0.00) 0.020(0.50) 0.013(0.35) 0.008(0.20) 0.003(0.08) 0.044(1.10) 0.035(0.90) 0.006(0.15)MIN. ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous THERMALCHATACTERISTICS Parameter Max Power Dissipation (Note 1) Storage Temperature Junction Temperaure Thermal Resistance, Junction to Ambient Note 1 : Transistor mouted on FR-4 board 70 x 60 x 1 mm. STAD-JUN.29.2005 Symbol VCEO VCBO VEBO IC Symbol PTOT TSTG T RΘJA Value -60 -60 -5.0 -600 Units V V V m A Value 225 -55 to 150 -55 to 150 556 Units m W OC OC OC / W PAGE . 1 ELECTRICAL CHARACTERISTICS (T =25OC, unless otherwise noted) J Parameter Symbol Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance Emitter-Base Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time V(BR)CEO IC=-10m A,IB=0 -60 -...