-Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier. 0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20)
SOT-23
0.119 (3.00) 0.110 (2.80)
3
1
0.083 (2.10) 0.066 (1.70)
2
0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20)
Collector 3
0.020 (0.50) 0.013 (0.35)
0.006 (0.15) max 0.007 (0.20) min
1 Base
2 Emitter
Dimensions in inches and (millimeter)
Maximum Rat.
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General Purpose Transistor
SMD Diodes Specialist
MMBT2907A-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier.
0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20)
SOT-23
0.119 (3.00) 0.110 (2.80)
3
1
0.083 (2.10) 0.066 (1.70)
2
0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20)
Collector 3
0.020 (0.50) 0.013 (0.35)
0.006 (0.15) max 0.007 (0.
MMBT2907A-G Datasheet
