FEATURES
-Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 0.066 (1.70) 0.044 (1.10) 0.035 (0.90) 2 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 2 Emitter 0.007 (0.20) min Dimensions in inches and (millimeter) MAXIMUM RATINGS
(at T A =25 C unless otherwise noted) Parameter Collector-Base voltage Powe r di ssipa tioi n Collector current-Continuous St or ag e tempe rat ur e an d jun ction tempe rat ur e O O Symbol V CBO P CM I CM T STG , T J Min Max -60 0. 3 -0.6 Unit V W A o -55 +1 50 C ELECTRICAL CHARACTERISTICS
(at T A =25 C unless otherwise noted) Parameter Collector-Base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Conditions I C =-10µA, I E =0 I C =-10mA, I B =0 I E =-10µA, I C...
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