SPTJ10R10B Description
100V N-Channel MOSFET General.
SPTJ10R10B Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=7.0 mΩ@VGS=10V
- Excellent FOM RDS_ON xQg
- Fast Recovery Body Diode
- Part: SPTJ10R10B
- Manufacturer: PIP
- Size: 1.12 MB
Related PIP Datasheets
| Part Number | Description |
|---|---|
| SPTJ10R16H | 100V N-Channel MOSFET |
| SPTA60R160E | 600V N-ch Multi-Epi Super-Junction MOSFET |
| SPTA65R280 | 650V N-ch Super-Junction MOSFET |
| SPTB10R06 | 100V N-Channel MOSFET |
| SPTD04R014E | 40V N-Channel MOSFET |