SPTJ10R10B
SPTJ10R10B is 100V N-Channel MOSFET manufactured by PIP.
Features
- Proprietary New Trench Technology
- RDS(ON),typ.=7.0 mΩ@VGS=10V
- Excellent FOM RDS_ON x Qg
- Fast Recovery Body Diode
BVDSS 100V
RDS(ON),typ. 7.0mΩ
ID 80A
Applications
- Synchronous Rectification
- Power Management
- DC/DC Converter
- Motor Drive
Ordering Information
Part Number Package SPTJ10R10B PDFN5- 6
Brand
PDFN 5- 6 Pin Definitions and Inner Circuit
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Unit
VDSS
Drain-to-Source Voltage[1]
VGSS
Gate-to-Source Voltage
±20
Continuous Drain Current
Continuous Drain Current @ Tc=100℃
Pulsed Drain Current at VGS=10V[2]
Single Pulse Avalanche Energy L=1m H
360 dv/dt
Peak Diode Recovery dv/dt
Power...