SPTJ10R10B Overview
Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=7.0 mΩ@VGS=10V
- Excellent FOM RDS_ON xQg
- Fast Recovery Body Diode SPTJ10R10B BVDSS 100V RDS(ON),typ. 7.0mΩ ID 80A
| Part | SPTJ10R10B |
|---|---|
| Description | 100V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 1.12 MB |
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