SPTJ10R10B - 100V N-Channel MOSFET

PIP

Key Features

Proprietary New Trench Technology.
RDS(ON),typ. =7.0 mΩ@VGS=10V.
Excellent FOM RDS_ON xQg.
Fast Recovery Body Diode SPTJ10R10B BVDSS 100V RDS(ON),typ. 7.0mΩ ID 80A.

SPTJ10R10B 100v n-channel mosfet by PIP - Datasheet Preview

Datasheet Details

Part number	SPTJ10R10B
Manufacturer	PIP
File Size	1.12 MB
Description	100V N-Channel MOSFET
Datasheet	SPTJ10R10B Datasheet

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100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=7.0 mΩ@VGS=10V  Excellent FOM RDS_ON xQg  Fast Recovery Body Diode SPTJ10R10B BVDSS 100V RDS(ON),typ. 7.0mΩ ID 80A Applications  Synchronous Rectification  Power Management  DC/DC Converter  Motor Drive Ordering Information Part Number Package SPTJ10R10B PDFN5*6 Brand PDFN 5*6 Pin Definitions and Inner Circuit Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SPTJ10R10B Unit VDSS Drain-to-Source Voltage[1] 100 VGSS Gate-to-Source Voltage ±20 Continuous Drain Current 80 ID Continuous Drain Current @ Tc=100℃ 60 IDM Pulsed Drain Current at VGS=10V[2] 300 EAS Single Pulse Avalanche Energy L=1mH 360 dv/dt Peak Diode Recovery dv/dt 5.