SPTJ10R10B Overview
100V N-Channel MOSFET General.
SPTJ10R10B Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=7.0 mΩ@VGS=10V
- Excellent FOM RDS_ON xQg
- Fast Recovery Body Diode
SPTJ10R10B Datasheet Details
| Part number | SPTJ10R10B |
|---|---|
| Datasheet | SPTJ10R10B-PIP.pdf |
| File Size | 1.12 MB |
| Manufacturer | PIP |
| Description | 100V N-Channel MOSFET |
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