SPTJ10R16H Overview
100V N-Channel MOSFET General.
SPTJ10R16H Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=13mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Datasheet Details
| Part number | SPTJ10R16H |
|---|---|
| Datasheet | SPTJ10R16H-PIP.pdf |
| File Size | 1.29 MB |
| Manufacturer | PIP |
| Description | 100V N-Channel MOSFET |
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