SPTJ10R16H Overview
Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=13mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
| Part | SPTJ10R16H |
|---|---|
| Description | 100V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 1.29 MB |
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