Datasheet4U Logo Datasheet4U.com

SPTJ10R16H - 100V N-Channel MOSFET

Features

  • Proprietary New Trench Technology.
  • RDS(ON),typ. =13mΩ@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery Body Diode.

📥 Download Datasheet

Datasheet preview – SPTJ10R16H

Datasheet Details

Part number SPTJ10R16H
Manufacturer PIP
File Size 1.29 MB
Description 100V N-Channel MOSFET
Datasheet download datasheet SPTJ10R16H Datasheet
Additional preview pages of the SPTJ10R16H datasheet.

📁 Similar Datasheet

Other Datasheets by PIP

Full PDF Text Transcription

Click to expand full text
100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=13mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode Applications  Synchronous Rectification  UPS Inverter SPTJ10R16H BVDSS 100V RDS(ON),typ. 13mΩ ID 50A Ordering Information Part Number Package SPTJ10R16H PDFN5*6 Brand PDFN 5*6 Pin Definitions and Inner Circuit Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SPTJ10R16H Unit VDSS Drain-to-Source Voltage[1] 100 VGSS Gate-to-Source Voltage ±20 Continuous Drain Current 50 ID Continuous Drain Current @ Tc=100℃ 36 IDM Pulsed Drain Current at VGS=10V[2] 150 EAS Single Pulse Avalanche Energy L=1mH 100 dv/dt Peak Diode Recovery dv/dt 5.
Published: |