SPTJ10R16H Description
100V N-Channel MOSFET General.
SPTJ10R16H Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=13mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
- Part: SPTJ10R16H
- Manufacturer: PIP
- Size: 1.29 MB
Related PIP Datasheets
| Part Number | Description |
|---|---|
| SPTJ10R10B | 100V N-Channel MOSFET |
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| SPTA65R280 | 650V N-ch Super-Junction MOSFET |
| SPTB10R06 | 100V N-Channel MOSFET |
| SPTD04R014E | 40V N-Channel MOSFET |