SPTJ10R16H - 100V N-Channel MOSFET

PIP

Key Features

Proprietary New Trench Technology.
RDS(ON),typ. =13mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode.

SPTJ10R16H 100v n-channel mosfet by PIP - Datasheet Preview

Datasheet Details

Part number	SPTJ10R16H
Manufacturer	PIP
File Size	1.29 MB
Description	100V N-Channel MOSFET
Datasheet	SPTJ10R16H Datasheet

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100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=13mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode Applications  Synchronous Rectification  UPS Inverter SPTJ10R16H BVDSS 100V RDS(ON),typ. 13mΩ ID 50A Ordering Information Part Number Package SPTJ10R16H PDFN5*6 Brand PDFN 5*6 Pin Definitions and Inner Circuit Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SPTJ10R16H Unit VDSS Drain-to-Source Voltage[1] 100 VGSS Gate-to-Source Voltage ±20 Continuous Drain Current 50 ID Continuous Drain Current @ Tc=100℃ 36 IDM Pulsed Drain Current at VGS=10V[2] 150 EAS Single Pulse Avalanche Energy L=1mH 100 dv/dt Peak Diode Recovery dv/dt 5.