SPTJ10R16H
SPTJ10R16H is 100V N-Channel MOSFET manufactured by PIP.
Features
- Proprietary New Trench Technology
- RDS(ON),typ.=13mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Applications
- Synchronous Rectification
- UPS Inverter
BVDSS 100V
RDS(ON),typ. 13mΩ
ID 50A
Ordering Information
Part Number Package SPTJ10R16H PDFN5- 6
Brand
PDFN 5- 6 Pin Definitions and Inner Circuit
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Unit
VDSS
Drain-to-Source Voltage[1]
VGSS
Gate-to-Source Voltage
±20
Continuous Drain Current
Continuous Drain Current @ Tc=100℃
Pulsed Drain Current at VGS=10V[2]
Single Pulse Avalanche Energy L=1m H
100 dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above...