2SB772SQ Datasheet | PJ

Features - High current output up to 3A - Low saturation votage - plement to 2SB882SQ Equivalent Circuit 2.Collector 1.Base 3. Emitter Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Base Current Maximum Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM -IB PD TJ TSTG 2SB772SQ PNP Transistor SOT-89 1.Base 2.Collector 3. Emitter Marking Code : 2SB772 -X X: R/Q/P/E Value 40 30 5 3 7 0.6 1 150 -55 to +150 Unit V V V A A A W ℃ ℃ .pingjingsemi. 1/6 Revison：3.0 Feb-2022 Electrical Characteristics (TA=25℃) Parameter DC Current Gain at VCE = -2 V, IC = -20 m A at VCE = -2 V, IC = -1 A Current Gain Group Collector Base Cutoff Current at VCB = -30V Emitter Base Cutoff Current at VEB = -3 V Collector Base Breakdown Voltage at IC = -100 μA Collector Emitter Breakdown Voltage at IC = -1 m A Emitter Base Breakdown Voltage at IE = -100 μA Collector Emitter Saturation Voltage at IC = -2 A, IB = -200 m A Base Emitter Saturation Voltage at IC = -2 A, IB = -200 m A Transition Frequency at VCE = -5 V, IC = -100 m A Output Capacitance at VCB = -10 V, f = 1 MHz Symbol -ICBO -IEBO...