PSD62-08 Overview
5 Nm 160 g Symbol Test Conditions Characteristic Value IR VF VTO rT RthJC RthJK VR = VRRM, TVJ = 25°C ≤ VR = VRRM, TVJ = TVJM ≤ IF = 150 A, TVJ = 25 °C ≤ For power-loss calculations only per Diode; DC current per module per Diode; DC current per module 0.3 mA 5 mA 1.8 V 0.8 V 8 mΩ 1.45 K/W 0.24 K/W 1.87 K/W 0.31 K/W ds Creeping distance on surface dA Creeping distance in air a Max.
PSD62-08 Key Features
- Isolation voltage 3000 V∼
- Planar glass passivated chips
- Blocking voltage up to 1800 V
- Low forward voltage drop
- Ul registered E 148688