PT5616 Overview
The devices are full bridge drivers to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. The six independent drivers are controlled at the low-side using CMOS and LSTTL patible signals, down to 3.3V logic. The device includes an under -voltage detection unit with hysteresis characteristic and over -current detection.
PT5616 Key Features
- Drives up to six IGBT/MOSFET power devices
- All high side channels fully operate up to +600V
- Gate drive supplies up to 18 V per channel
- Under-voltage lockout for all channels
- Over-current protection
- Flexible over-temperature shutdown input
- Advanced input filter
- Built-in dead-time protection
- Shoot-through (cross-conduction) protection
- Independent Enable/disable input and fault
PT5616 Applications
- Drives up to six IGBT/MOSFET power devices
- All high side channels fully operate up to +600V
- Gate drive supplies up to 18 V per channel
- Under-voltage lockout for all channels
- Over-current protection