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PT5618 - 200V Three-Phase Gate Driver

General Description

The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver.

Builtin dead time protection and Shoot-through protection that prevent half-bridge against damage.

Key Features

  • Integrated 200V half-bridge high side driver.
  • Driver up to 3-phase half-bridge gates.
  • Built-in dead time control.
  • Shoot-through protection.
  • Under voltage lockout for VCC and VBS.
  • 3.3V, 5V,15V input logic Compatible.
  • Built-in input filter.
  • Low standby current.
  • IO+/IO-: 320mA/620mA.
  • Built-in dead time:0.55us(typ. ).
  • Common-Mode dv/dt Noise Canceling Circuit.
  • Tolerant to negative transient voltage.
  • Low di/dt gate drive for better nois.

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Datasheet Details

Part number PT5618
Manufacturer PTC
File Size 889.06 KB
Description 200V Three-Phase Gate Driver
Datasheet download datasheet PT5618 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PT5618 200V Three-Phase Gate Driver DESCRIPTION The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Builtin dead time protection and Shoot-through protection that prevent half-bridge against damage. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. Novel high-voltage BCD process and common-mode noise canceling technique provide stable operation of high-side drivers under high-dv/dt noise circumstances and excellent negative transient voltage tolerance. PIN EN designed for standby mode can be used to enable chip into low quiescent current state and get long battery life time.