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P4C1981 - STATIC CMOS RAM

General Description

The P4C1981/L and P4C1982/L are 65,536-bit (16Kx4) ultra high-speed static RAMs similar to the P4C198, but with separate data I/O pins.

The P4C1981/L feature a transparent write operation when OE is low; the outputs of the P4C1982/L are in high impedance during the write cycle.

Key Features

  • Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times).
  • 10/12/15/20/25 ns (Commercial).
  • 12/15/20/25/35 ns (Industrial).
  • 15/20/25/35/45 ns (Military) Low Power Operation (Commercial/Military) Output Enable and Dual Chip Enable Functions 5V ± 10% Power Supply Data Retention with 2.0V Supply, 10 µA Typical Current (P4C1981L/1982L Military) Separate Inputs and Outputs.
  • P4C1981/L Input Data at Outputs during Write.
  • P4C1982/L Outputs in High Z during.

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Datasheet Details

Part number P4C1981
Manufacturer PYRAMID
File Size 321.97 KB
Description STATIC CMOS RAM
Datasheet download datasheet P4C1981 Datasheet

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Other Datasheets by PYRAMID

Part Number Description
P4C1981L STATIC CMOS RAM
P4C198 ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS
P4C1982 STATIC CMOS RAM
P4C1982L STATIC CMOS RAM
P4C198A ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P4C1981/P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military) Low Power Operation (Commercial/Military) Output Enable and Dual Chip Enable Functions 5V ± 10% Power Supply Data Retention with 2.