PJP4N60 Datasheet | PanJit Semiconductor

PJP4N60 / PJF4N60 600V N-Channel Enhancement Mode MOSFET Features - 4A , 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G MECHANICAL DATA - Case: TO-220AB / ITO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION TYPE PJP4N60 PJF4N60 MARKING P4N60 F4N60 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum...