2SC2411K Datasheet | PanJit Semiconductor

FEATURES - NPN epitaxial silicon,planar design - Collector-emitter voltage VCE=32V - Collector current IC=500m A - In pliance with EU Ro HS 2002/95/EC directives 32 Volts POWER 225m W MECHANICAL DATA Case : SOT-23 plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx Weight : 0.008 gram Marking : 241 ABSOLUTE RATINGS (TA=25o C) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 40 5 500 Units V V V m A THERMAL CHARACTERISTICS Parameter M a x. P o w e r D i s s i p a t i o n ( N o t e 1 ) The r m a l R e s i s t a nc e , J unc t i o n t o A m b i e nt J u n c t i o n Te m p e r a t i o n S t o r a g e Te m p e r a t i o n S ym b o l P TOT R θJ A TJ T S TG Va l ue 225 556 -5 5 to +1 5 0 -5 5 to +1 5 0 U ni t s m W C /W NOTE : 1.Transistor mounted on FR-4 board 70 x 60 x 1mm REV.0.1-DEC.31.2008 PAGE . 1 Free Datasheet http://../ ELECTRICAL CHARACTERISTICS(TA=25o C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 2) Collector-Emitter Saturation Voltage Transition Frequency Collector-Base Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE VCE(SAT) f T C ob Conditions I C=100 µA I C=1m A I E=100µA VCB=20V VEB=4V VCE=3V,I C=100m A I C=500m A,I B=50m A VCE=5V,I E=-200m A, f=100MHZ VCB=10V,I E=0A,f=1MHZ Min. 40 32 5 120 - Typ. 250 6.5 Max. 1 1 390 0.6 - Units V V V µA µA V MHz p F NOTE : 2.Pulse Test : Pulse width < 300µs, duty cycle < 2.0% REV.0.1-DEC.31.2008 PAGE . 2 Free Datasheet http://../ ELECTRICAL CHARACTERISTICS...