2N7002KDW-AU Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@500m A=3Ω - RDS(ON), VGS@4.5V,IDS@200m A=4Ω - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Very Low Leakage Current In Off Condition - Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. - ESD Protected 2KV HBM - Acqire quality system certificate : TS16949 - AEC-Q101 qualified - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA - Case: SOT-363 Package - Terminals: Solderable per MIL-STD-750,Method 2026 - Approx. Weight: 0.0002 ounces, 0.006 grams - Marking: K27 Maximum RATINGS and Thermal Characteristics (T =25OC unless otherwise noted ) A 654 123 Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous D rain C urrent Pulsed Drain Current 1) Maximum Power Dissipation Operating Junction and Storage Temp er at ur e R a ng e T A= 2 5 OC T A= 7 5 OC Junction-to Ambient Thermal Resistance (PCB mounted)2 I DM PD TJ, TSTG RθJA Limit 60 +20 800 200 120 -55 to +150 Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t<10 sec 3.Pulse width<300us, Duty...