2N7002KDW Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@500m A=3Ω - RDS(ON), VGS@4.5V,IDS@200m A=4Ω - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Very Low Leakage Current In Off Condition - Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. - ESD Protected 2KV HBM - ponent are in pliance with EU Ro HS 2002/95/EC directives MECHANICALDATA - Case: SOT-363 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : K27 654 123 Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) Drain-Source Voltage PARAMETER Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Maximum Power Dissipation Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e TA =25OC TA =75OC Junction-to Ambient Thermal Resistance(PCB mounted)2 S ym b o...