BAV199 Datasheet | PanJit Semiconductor

FEATURES - Suface mount package ideally suited for automatic insertion. - Very low leakage current. 2p A typical at VR=75V. - Low capacitance. 2p F max at VR=0V, f=1MHz - In pliance with EU Ro HS 2002/95/EC directives MECHANICAL DATA - Case: SOT-23 plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx weight: 0.008 gram - Marking: BAS116: PA,BAW156:P4,BAV170:P3,BAV199:PB ABSOLUTE RATINGS (each diode) Reverse Voltage PA RA ME TE R Peak Reverse Voltage Continuous Forward Current Non-repetitive Peak Forward Surge Current at t=1.0us THERMAL CHARACTERISTICS PA RA ME TE R Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) J u n c t i o n Te m p e r a t u r e S t o r a g e Te m p e r a t u r e S ym b o l VR V RM IF I FSM S ym b o l P TOT RθJA TJ TSTG Value 75 100 0.2 4.0 Value 250 500 -55 to 150 -55 to 150 NOTE: 1. FR-4 Board = 70 x 60 x 1mm. SINGLE MON ANODE MON CATHODE Uni ts V V A A Uni ts m W OC/W OC OC SERIES STAD-DEC.07.2007 BAS116 BAW156 BAV170 BAV199 PAGE . 1 BAS116/BAW156/BAV170/BAV199 ELECTRICAL CHARACTERISTICS (each diode) (TA=25OC, unless otherwise noted) PA RA ME TE R Reverse B reakdown Voltage Reverse C urrent Forward...