MMBT2222ATB Datasheet | PanJit Semiconductor

FEATURES - NPN epitaxial silicon, planar design - Collector-emitter voltage VCE = 40V - Collector current IC = 600m A - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case: SOT-523, Plastic Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams Marking: MY ABSOLUTE RATINGS Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous PARAMETER THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e Note 1 : Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Units V V V m A Symbol PTOT RθJA TJ,TSTG Value 225 833 -55 to +150 Units m W OC/W OC October 15,2015-REV.02 PAGE . 1 ELECTRICAL CHARACTERISTICS PARAMETER Collector - Emitter Breakdown Voltage Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector - Emitter Saturation Voltage (Note 2) Base - Emitter Saturation Voltage (Note 2) Collector - Base Capacitance...