MMBT2907A Datasheet | PanJit Semiconductor

FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600m A Pb free product are available : 99% Sn above can meet Ro HS environment substance directive request SOT- 23 .056(1.40) .047(1.20) .119(3.00) .110(2.80) .083(2.10) .066(1.70) MECHANICAL DATA Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : M7A .006(.15)MAX .020(.50) .013(.35) .044(1.10) .035(0.90) .007(.20)MIN .103(2.60) .086(2.20) Unit: inch (mm) .006(.15) .002(.05) ABSOLUTE MAXIMUM RATINGS Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous THERMALCHATACTERISTICS Symbol VC E O VC B O VE B O Parameter Max Power Dissipation (Note 1) Storage Temperature Junction Temperaure Thermal Resistance, Junction to Ambient Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in. Symbol PTO T TS TG TJ RΘ JA REV.0-JUN.1.2005 Value -60 -60 -5.0 -600 Units V V V m A Value 225 -55 to 150 -55 to 150 556 Units m W OC OC OC / W PAGE . 1 ELECTRICAL CHARACTERISTICS (T =25OC, unless otherwise noted) J Parameter Symbol Test Condition Min. Typ. Max. Units Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Base Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Capacitance Emitter-Base Capacitance Current Gain-Bandwidth Product Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time V(B R...