MMBT3906W Datasheet | PanJit Semiconductor

FEATURES - PNP epitaxial silicon, planar design - Collector-emitter voltage VCE = -40V - Collector current IC = -200m A - Lead free in pliance with EU Ro HS 2011/65/EU directive - Green molding pound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA - Case: SOT-323, Plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Apporx. Weight: 0.0001 ounce, 0.005 gram - Marking: S2A ABSOLUTE RATINGS Collector - Emitter Voltage Parameter Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous THERMAL CHARACTERISTICS Parameter Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Note : 1. Transistor mounted on FR-5 board 1 x 0.75 x 0.062 in. March 30,2015-REV.03 Symbol VCEO VCBO VEBO IC Value -40 -40 -5 -200 Units V V V m A Symbol PTOT RθJA TJ TSTG Value 150 830 -55 to 150 -55 to 150 Units m W OC/W OC OC PAGE . 1 ELECTRICAL CHARACTERISTICS Parameter Collector - Emitter Breakdown Vo l t a g e Collector - Base Breakdown Vo l t a g e Emitt er - Base Breakdown...