MMBT4401 Datasheet | PanJit Semiconductor

FEATURES - NPN epitaxial silicon, planar design - Collector-emitter voltage VCE = 40V - Collector current IC = 600m A - In pliance with EU Ro HS 2002/95/EC directives .119(3.00) .110(2.80) Unit: inch (mm) .007(.20)MIN .103(2.60) .086(2.20) .056(1.40) .047(1.20) MECHANICAL DATA - Case: SOT-23, Plastic - Terminals: Solderable per MIL-STD-750, Method 2026 - Approx. Weight: 0.008 gram - Marking: M4A .083(2.10) .066(1.70) .006(.15)MAX .020(.50) .013(.35) .044(1.10) .035(0.90) .006(.15) .002(.05) ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Fig.34 Symbol VCEO VCBO VEBO IC THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Symbol PTOT Thermal Resistance , Junction to Ambient RθJA Junction Temperature Storage Temperature TISTG Note 1: Transistor...