MMDT3906 Datasheet | PanJit Semiconductor

FEATURES Electrically Isolated Dual PNP Switching Transistor Lead-Free Plating (100% matte tin finish) APPLICATIONS General Purpose Amplifier Applications Hand-Held puters, PDAs Device Marking Code: S2A MAXIMUM RATINGS Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Voltage Collector Current Total Power Dissipation (Note 1) TJ = 25°C Unless otherwise noted Symbol VCBO V CEO VEB IC PD TJ Tstg Value -40 -40 -5.0 -200 200 -55 to +150 -55 to +150 Units V V V m A m W °C °C Operating Junction Temperature Range Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol R thja Value 625 Units °C/W Note 1. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum remended pad layout 9/20/2005 Page 1 .panjit. .. Parameter Symbol Conditions Min -40 -40 -5.0 60 80 100 60 30 -0.65 250 Typ Max -50 -50 300 -0.25 -0.40 -0.85 -0.95 4.5 10 35 35 225 75 V V V MHz p F p F ns ns ns ns Units V V V n A n A ELECTRICAL CHARACTERISTICS (Each Transistor) TJ = 25°C Unless otherwise noted Collector-Emitter Breakdown Voltage V (BR)CEO I C = -1.0m A Collector-Base Breakdown Voltage V (BR)CBO I C = -10u A Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current V (BR)EBO I E = -10u A ICEX IBL VCE= -30V, V EB= -3.0V VCE= -30V, V EB= -3.0V I C = -0.1m A, VCE = -1.0V I C = -1.0m A, VCE = -1.0V DC Current Gain h FE I C = -10m A, VCE= -1.0V I C = -50m A, V CE= -1.0V I C = -100m A, VCE= -1.0V Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) f T CCBO CEBO td tr ts tf I C = -10m A, I B = -1.0m A I C = -50m A, I B = -5.0m A I C = -10m A, I B = -1.0m A I C = -50m A, I B = -5.0m A V CE= -20V, I C = -10m A f = 100MHz VCB= -5.0V, f =1.0MHz VEB = -0.5V, f =1.0MHz VCC = -3.0V, I C = -10m A VBE(off) = 0.5V, I B1 = -1.0m A V CC= -3.0V, I C= -10m A I B1= I B2= -1.0m A Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Delay Time Rise Time...