PJ4N3KDW Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@2.5V,IDS@1m A=7.0Ω - RDS(ON), VGS@4.0V,IDS@10m A=5.0Ω - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - The MOSFET elements are independent,eliminating interference - Mounting cost and area can be cut in half - Very Low Leakage Current In Off Condition - Specially Designed for Battery Operated Systems,Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. - Low voltage drive (2.5V) makes this device ideal for portable equipment - ESD Protected 2KV HBM - In pliance with EU Ro HS 2002/95/EC directives 6 5 4 MECHANICAL DATA - Case: SOT-363 Package - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : 4N3 1 2 3 Absolute Maximum Ratings (TA=25OC ) P a r a m e te r D ra i n-S o urc e Vo lta g e Ga te - S o ur c e Vo lta g e e C o nti nuo us D ra i n C ur r e nt P uls e d D r a i n C ur re nt (1 ) S ym b o l V DS V GS I I T A =2 5 O C T A =7 5 O C Li mi t 30 + 20 100 800 200 120 -5 5 to + 1 5 0 625 Uni ts V V m A m A m W M a xi m um p o we r D i s s i p a ti o n PD T J ,T S TG RθJA Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e .. J unc ti o n- to A m b i e nt The r m a l Re s i s ta nc e ( P C B m o unte d ) 2 C /W Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 5 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.3-SEP.25.2009 PAGE . 1 ELECTRICAL CHARACTERISTICS (TA=25OC ) P a ra me te r S ta ti c D ra i n- S o ur c e B r e a k d o wn Vo lta g e Ga te Thr e s ho ld Vo lta g e D ra i n- S o ur c e On- S ta te Re s i s ta nc e D ra i n- S o ur c e On- S ta te Re s i s ta nc e Ze ro Ga te Vo lta g e D r a i n C ur re nt Gate Body Leakage Forward Transconductance D i o d e F o r wa rd Vo lta g e Dynamic To ta l Ga te C ha rg e Tur n- On D e la y Ti m e Ri s e Ti me Tur n- Off D e la y Ti m e F a ll ti me Inp ut C a p a c i ta...