PJP5N60
PJP5N60 is 600V N-Channel Enhancement Mode MOSFET manufactured by PanJit Semiconductor.
FEATURES
- 5A , 600V, RDS(ON)=2.1Ω@VGS=10V, ID=2.5A
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- - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU Ro Hs 2002/95/EC Directives
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
2 G
3 D
2 G
3 D
MECHANICAL DATA
- Case: TO-220AB / ITO-220AB Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP5N60 PJF5N60
MARKING
P5N60 F5N60
PACKAGE
TO-220AB ITO-220AB
PACKING
Gate
50PCS/TUBE 50PCS/TUBE
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r
T A =2 5 O C
S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA
P J P 5 N6 0 600 +3 0 5 20 89 0 .7 1
P J F 5 N6 0
Uni ts V V
5 20 4 4 .6 0 .3...