PJP75N75 Datasheet | PanJit Semiconductor

FEATURES - RDS(ON), VGS@10V,IDS@30A=11mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for Converters and Power Motor Controls - Fully Characterized Avalanche Voltage and Current - In pliance with EU Ro HS 2002/95/EC directives MECHANICAL DATA - Case: TO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 - Marking : P75N75 Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PARAMETER Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS +20 Continuous Drain Current ID 7 5 Pulsed Drain Current 1) ID M Maximum Power Dissipation TA =25OC TA =75OC Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e TJ,TS TG Avalanche Energy with Single Pulse IAS=47A, VDD=37.5V, L=0.3m H Junction-to-Case Thermal Resistance RθJ C 350 105 62.5 -55 to +150 Junction-to Ambient Thermal Resistance(PCB...