PJQ2460 Datasheet | PanJit Semiconductor

Features - RDS(ON) , VGS@10V, ID@3.2A<75mΩ - RDS(ON) , VGS@4.5V, ID@2.0A<90mΩ - Advanced Trench Process Technology - High density cell design for ultra low on-resistance - Lead free in ply with EU Ro HS 2011/65/EU directives. - Green molding pound as per IEC61249 Std. (Halogen Free) Mechanical Data - Case: DFN2020B-6L Package - Terminals: Solderable per MIL-STD-750, Method 2026 - Marking: 460 DFN2020B-6L Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Ta=25o C Derate above 25o C Operating Junction and Storage Temperature Range Typical Thermal Resistance - Junction to Ambient, t<10s (Note 3) SYMBOL VDS VGS ID IDM TJ,TSTG RθJA LIMIT 60 +20 3.2 12.8 2.0 16 -55~150 UNITS V V A A W m W/ o C o C o C/W November 16,2015-REV.02 Page 1 PPJQ2460 Electrical Characteristics o (TA=25 C unless otherwise...