2SA683 - Silicon PNP epitaxial planer type Transistor

Panasonic

Key Features

s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance.
h (Ta=25˚C) Symbol ICBO Conditions VCB =.
20V, IE = 0 IC =.
10µA, IE = 0 IC =.
2mA, IB = 0 IE =.
10µA, IC = 0 VCE =.
10V, IC =.
500mA VCE =.

2SA683 silicon pnp epitaxial planer type transistor by Panasonic - Datasheet Preview

Datasheet Details

Part number	2SA683
Manufacturer	Panasonic
File Size	47.47 KB
Description	Silicon PNP epitaxial planer type Transistor
Datasheet	2SA683 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SA683	PNP Transistor	SEMTECH
2SA683	Silicon PNP transistor	BLUE ROCKET ELECTRONICS
2SA683	PNP Silicon Epitaxial Planar Transistor	CHINA BASE
2SA683	PNP Transistor	JCET
2SA680	(2SA679 / 2SA680) Silicon POwer Transistors	SavantIC

Other Datasheets by Panasonic

Part Number	Description
2SA684	Silicon PNP epitaxial planer type Transistor
2SA699	SI PNP EPITAXIAL PLANAR TRANSISTOR
2SA699A	SI PNP EPITAXIAL PLANAR TRANSISTOR
2SA0683	Silicon PNP Transistor
2SA0684	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 5.9± 0.2 Unit: mm 4.9± 0.2 q q Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. (Ta=25˚C) Ratings –30 –60 –25 –50 –5 –1.5 –1 1 150 –55 ~ +150 Unit V 2.54± 0.15 +0.3 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA683 2SA684 2SA683 VCBO VCEO VEBO ICP IC PC Tj Tstg Symbol emitter voltage 2SA684 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V 0.45–0.1 0.45–0.1 1.27 +0.2 V A A W ˚C ˚C 1.27 13.5± 0.5 0.7–0.2 0.7± 0.1 8.6± 0.