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2SA720A - Silicon PNP Transistor

Key Features

  • q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings.
  • 80.
  • 70.
  • 5.
  • 1.
  • 0.5 625 150.
  • 55 ~ +150 Unit V V V A A mW ˚C ˚C 13.5±0.5 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency.

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Datasheet Details

Part number 2SA720A
Manufacturer Panasonic
File Size 38.42 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA720A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Features q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings –80 –70 –5 –1 – 0.5 625 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 13.5±0.5 High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.45 –0.1 1.27 +0.2 0.45 –0.1 1.27 +0.2 1 2 3 2.3±0.2 2.54±0.