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Power Transistors
2SB0930 (2SB930), 2SB0930A (2SB930A)
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Silicon PNP epitaxial planar type
For power amplification Complementary to 2SD1253, 2SD1253A ■ Features
• High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
Unit: mm
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
4.4±0.5
Parameter Collector-base voltage (Emitter open) 2SB0930 2SB0930A
Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg
Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150
Unit V
1 2
2.0±0.
2SB0930 Datasheet
