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2SB0930A - Power Transistors

Download the 2SB0930A datasheet PDF. This datasheet also covers the 2SB0930 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • s.
  • High forward current transfer ratio hFE which has satisfactory linearity.
  • Low collector-emitter saturation voltage VCE(sat).
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0930 2SB0930A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating.
  • 60.
  • 80.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB0930_PanasonicSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SB0930 (2SB930), 2SB0930A (2SB930A) www.DataSheet4U.net Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1253, 2SD1253A ■ Features • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5 Parameter Collector-base voltage (Emitter open) 2SB0930 2SB0930A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −4 −8 40 1.3 150 −55 to +150 Unit V 1 2 2.0±0.