Click to expand full text
Power Transistors
2SB0932 (2SB932)
www.DataSheet4U.net
Silicon PNP epitaxial planar type
For Power switching
8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1
Unit: mm
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.0±0.3 1.5±0.1
■ Features
4.4±0.5
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating −130 −80 −7 −4 −8 35 1.
2SB0932 Datasheet
