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2SB0931 - Power Transistors

Key Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Large collector current IC.
  • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.5.
  • Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base op.

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Power Transistors 2SB0931 (2SB931) www.DataSheet4U.net Silicon PNP epitaxial planar type For Power switching Complementary to 2SD1254 ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.0±0.3 1.5±0.1 Unit: mm 8.5±0.2 6.0±0.2 3.4±0.3 1.0±0.1 4.4±0.