2SB0976
2SB0976 is Power Transistors manufactured by Panasonic.
Features
- Low collector-emitter saturation voltage VCE(sat)
- Large collector current IC
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5
- Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating
- 27
- 18
- 7
- 5
- 8 0.75 150
- 55 to +150 Unit V V
1 2 3 0.45+0.15
- 0.1 2.5+0.6
- 0.2 2.5+0.6
- 0.2 0.45+0.15
- 0.1
2.3±0.2
V A A W °C °C
5.1±0.2
1: Emitter 2: Collector 3: Base TO-92-B1 Package
- Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio
- 1, 2 Collector-emitter saturation voltage
- 1 Transition frequency Collector output capacitance (mon base, input open circuited) Symbol VCEO VEBO ICBO IEBO h FE VCE(sat) f T Cob Conditions IC =
- 1 m A, IB = 0 IE =
- 10 µA, IC = 0 VCB =
- 10 V, IE = 0 VEB =
- 5 V, IC = 0 VCE =
- 2 V, IC =
- 2 A IC =
- 3 A, IB =
- 0.1 A VCB =
- 6 V, IE = 50 m A, f = 200 MHz VCB =
- 20 V, IE = 0, f = 1 MHz 125
- 0.4 120 60 Min
-...
