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2SB0976 - Power Transistors

Features

  • s.
  • Low collector-emitter saturation voltage VCE(sat).
  • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating.
  • 27.
  • 18.

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Transistors 2SB0976 (2SB976) www.DataSheet4U.net Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.7±0.1 Unit: mm 5.0±0.2 4.0±0.2 0.7±0.2 12.9±0.5 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −27 −18 −7 −5 −8 0.75 150 −55 to +150 Unit V V 1 2 3 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 0.45+0.15 –0.1 2.3±0.2 V A A W °C °C 5.1±0.
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